Creep flow, diffusion, and electromigration in small scale interconnects

نویسندگان

  • Dongchoul Kim
  • Wei Lu
چکیده

This paper proposes a three-dimensional electromigration model for void evolution in small scale interconnects. Concurrent kinetics of creep flow and surface diffusion as well as the effect of the surrounding material is considered to provide better understanding of the evolution process. The multiple kinetics and energetics are incorporated into a diffusive interface model. A semi-implicit Fourier spectral method and the preconditioned biconjugate-gradient method are proposed for the computations to achieve high efficiency and numerical stability. We systematically studied kinetic processes in diffusion dominated to creep dominated regime. Which process dominates, as revealed by the analysis, is determined by a combination of viscosity, mobility, interconnect thickness, and void radius. Previous studies on electromigration suggest that a circular void subjected to an electron wind force and surface diffusion is always stable against any small shape perturbation. Our simulations show that a shape that is stable in surface diffusion can become unstable in a creep dominated process, which leads to a quite different void morphology. A spherical void can evolve into a bowl shape and further break into smaller voids. It is also shown that the interconnect geometry has an important effect. r 2006 Elsevier Ltd. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW Recent advances on electromigration in very-large-scale-integration of interconnects

Today, the price of building a factory to produce submicron size electronic devices on 300 mm Si wafers is over billions of dollars. In processing a 300 mm Si wafer, over half of the production cost comes from fabricating the very-large-scale-integration of the interconnect metallization. The most serious and persistent reliability problem in interconnect metallization is electromigration. In t...

متن کامل

A Continuum Theory That Couples Creep and Self - Diffusion

In a single-component material, a chemical potential gradient or a wind force drives self-diffusion. If the self-diffusion flux has a divergence, the material deforms. We formulate a continuum theory to be consistent with this kinematic constraint. When the diffusion flux is divergence-free, the theory decouples into Stokes’s theory for creep and Herring’s theory for self-diffusion. A length em...

متن کامل

Concurrent electromigration and creep in lead-free solder

When electric current flows in a solder bump, electromigration generates stress, but creep relaxes it. After some time, the bump develops a steady-state stress field. We present a theory to show that the two processes — electromigration and creep — set an intrinsic length. When the intrinsic length is large compared to the height of the bump, electromigration is fast relative to creep and the s...

متن کامل

Stress-Induced Anisotropy of Electromigration in Copper Interconnects

Abstract. Modern interconnect structures are exposed to high mechanical stresses during their operation. These stresses have their sources in interconnect process technology and electromigration. The mechanical properties of passivating films and the choice of process technology influence electromigration reliability. In this paper we analyze the interplay between electromigration and mechanica...

متن کامل

Effects of width scaling and layout variation on dual damascene copper interconnect electromigration

Electromigration versus line width in the 0.12–10 lm range and the configuration of the via/line contact in dual damascene Cu has been investigated. There are two scenarios for width scaling impact on electromigration. One is the width < 1 lm region, in which the MTF shows a weak width dependence, except for the via-limited condition. The other is the width > 1 lm region, in which the MTF shows...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2006